Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...

The evaluation samples incorporate an in-house newly developed controller for UFS 5.0 and Kioxia's 8th-generation BiCS FLASH (TM), and are available in capacities of 512 GB and 1 TB. The package has ...

A research team from Northwestern Engineering and the University of Messina in Italy have developed a new magnetic memory device that could lead to faster, more robust Artificial Intelligence (AI) ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced sampling [1] of the industry’s first [2] Universal Flash Storage [3] (UFS) embedded flash memory devices ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...

(Nanowerk News) Researchers have reported a nano-sized neuromorphic memory device that emulates neurons and synapses simultaneously in a unit cell, another step toward completing the goal of ...

Scientists have developed a new three-valued memory device inspired by solid lithium-ion batteries. The proposed device, which has an extremely low energy consumption, may be key for the development ...

UFS 5.0 is being developed to deliver significantly higher data rates by adopting MIPI M‑PHY 6.0 for the physical layer and UniPro 3.0 for the protocol. The new HS‑GEAR6 mode introduced in M‑PHY 6.0 ...