Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
The CAS300M17BM2 is the industry’s first all-SiC 1.7-kV power module that is available in an industry standard 62-mm housing. The half-bridge module exhibits an 8 mΩ on-resistance and is capable of ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, A Cree Company, and a leading global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified commercial power module from ...
Comparison between DOT-247 and Discrete Products Two topologies offered in standardized 2-in-1 modules: half-bridge and common-source, offering increased flexibility. The DOT-247’s unique dual TO-247 ...
Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback