EDN

Monolithic GaN Power Transistor Half Bridge Enables System Efficiency

EPC announces the EPC2102, 60 V and the EPC2103, 80 V enhancement-mode monolithic GaN transistor half bridges. By integrating two eGaN® power FETs into a single device, interconnect inductances and ...
EDN

First GaN half-bridge transistor integrates two GaN FETs

Today, the most common building block used in power conversion is the half bridge. It is the starting point for the journey towards a power system-on-a-chip. The EPC2100 is the first commercially ...