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4. A uniform oxide layer of 0.4µm thickness is selectively etched to expose the siliconsurface in some locations on a wafer surface. A second oxidation at 1000°C inH2O grows 0.2µm on the bare silicon.(a) Sketch a cross-section of the SiO2 in all locations on the wafer and the positionof the Si/SiO2 interface.(b) Would your picture be the same if the second oxidation grew the 0.2µm at adifferent temperature? Explain.
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